COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 50.00 AMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR DEVICE DIODE |
FUNCTION FOR WHICH DESIGNED | RECTIFIER |
OVERALL HEIGHT | 0.430 INCHES NOMINAL |
OVERALL LENGTH | 1.500 INCHES NOMINAL |
OVERALL WIDTH | 1.005 INCHES NOMINAL |
MATERIAL | CERAMIC ENCLOSURE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION |
MOUNTING FACILITY QUANTITY | 6 |
MOUNTING METHOD | UNTHREADED HOLE |
POWER RATING PER CHARACTERISTIC | 60.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
PRECIOUS MATERIAL AND LOCATION | PLATED CASE GOLD |
PRECIOUS MATERIAL | GOLD |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
SPECIAL FEATURES | CASE CONTAINS BERYLLIUM OXIDE - HANDLE AND DISPOSE IAW HAZMAT PROCEDURES |
TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
TEST DATA DOCUMENT | 82577-655365 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 45.0 MAXIMUM REVERSE VOLTAGE, PEAK ALL SEMICONDUCTOR DEVICE DIODE |