SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND |
| 5.0 MAXIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
POWER RATING PER CHARACTERISTIC | 5.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
INCLOSURE MATERIAL | PLASTIC |
TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.450 INCHES MAXIMUM |
MOUNTING METHOD | TERMINAL |
INTERNAL CONFIGURATION | JUNCTION CONTACT |
TRANSFER RATIO | 65.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER AND |
| 330.0 MAXIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 165.0 DEG CELSIUS JUNCTION |
ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
JOINT ELECTRONIC DEVICE ENGINEERING COUNCIL/JEDEC/CASE OUTLINE DESIGNATION | TO-126 |
TERMINAL LENGTH | 0.655 INCHES MAXIMUM |
OVERALL HEIGHT | 0.120 INCHES MAXIMUM |
OVERALL WIDTH | 0.330 INCHES MAXIMUM |
SPECIAL FEATURES | JUNCTION PATTERN ARRANGEMENT: PNP |