POWER RATING PER CHARACTERISTIC | 400.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL SEMICONDUCTOR DEVICE DIODE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 DEG CELSIUS JUNCTION |
INCLOSURE MATERIAL | GLASS |
MOUNTING METHOD | PRESS FIT |
TERMINAL TYPE AND QUANTITY | 20 UNINSULATED WIRE LEAD |
OVERALL LENGTH | 0.358 INCHES MAXIMUM |
OVERALL HEIGHT | 0.100 INCHES MAXIMUM |
OVERALL WIDTH | 0.358 INCHES MAXIMUM |
FEATURES PROVIDED | ELECTROSTATIC SENSITIVE |
SPECIAL FEATURES | ALL SEMICONDUCTOR DEVICE DIODE JUNCTION PATTERN ARRANGEMENT: PN |
COMPONENT NAME AND QUANTITY | 4 SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 9.55 MAXIMUM NOMINAL REGULATOR VOLTAGE ALL SEMICONDUCTOR DEVICE DIODE |
VOLTAGE TOLERANCE IN PERCENT | -5.0 TO 5.0 ALL SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 5.50 MILLIAMPERES MAXIMUM VOLTAGE REGULATOR DIODE CURRENT ALL SEMICONDUCTOR DEVICE DIODE |