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National Stock Number: 5961-01-291-9162
Federal Supply Class: 5961
National Item Identification Number: 012919162
Description: SEMICONDUCTOR DEVICES,UNITIZED
Detail: Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
60514170-1 | 34860 | NORTHROP GRUMMAN SYSTEMS CORPORATION | SNF1045 | 07256 | SILICON TRANSISTOR CORP SUB OF BBF INC | VQ5025 | 17856 | SILICONIX INCORPORATED |
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Techincal Specification:
COMPONENT NAME AND QUANTITY | 4 TRANSISTOR | CURRENT RATING PER CHARACTERISTIC | 2.00 AMPERES MAXIMUM DRAIN CUTOFF CURRENT ALL TRANSISTOR | FEATURES PROVIDED | HERMETICALLY SEALED CASE | OVERALL HEIGHT | 0.150 INCHES MAXIMUM | OVERALL LENGTH | 0.786 INCHES MAXIMUM | OVERALL WIDTH | 0.310 INCHES MAXIMUM | MATERIAL | CERAMIC ENCLOSURE | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS AMBIENT AIR | MOUNTING METHOD | TERMINAL | POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM TOTAL POWER DISSIPATION ALL TRANSISTOR | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | TERMINAL LENGTH | 0.210 INCHES MAXIMUM | TERMINAL TYPE AND QUANTITY | 14 PIN | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE ALL TRANSISTOR |
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