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National Stock Number:
5961-01-307-2490
Federal Supply Class:
5961
National Item Identification Number:
013072490
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| CD431490 | 05277 | WESTINGHOUSE ELECTRIC CORP SEMICONDUCTOR DIV | | CD431490 | 09228 | WESTINGHOUSE ELECTRIC CORP POWER CIRCUIT BREAKER DIV INDUSTRIAL CERAMICS DEPT |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE THYRISTOR | | CURRENT RATING PER CHARACTERISTIC | 145.00 AMPERES MAXIMUM ON-STATE CURRENT, RMS TOTAL ALL SEMICONDUCTOR DEVICE THYRISTOR | | FEATURES PROVIDED | HERMETICALLY SEALED CASE | | OVERALL HEIGHT | 1.280 INCHES MAXIMUM | | OVERALL LENGTH | 3.640 INCHES MAXIMUM | | OVERALL WIDTH | 0.805 INCHES MAXIMUM | | MATERIAL | CERAMIC ENCLOSURE | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 125.0 CELSIUS JUNCTION | | MOUNTING METHOD | PRESS FIT | | SPECIAL FEATURES | ALL SEMICONDUCTOR DEIVCE THYRISTOR JUNCTION PATTERN ARRANGEMENT: PNPN | | POWER RATING PER CHARACTERISTIC | 16.0 WATTS MAXIMUM PEAK GATE POWER DISSIPATION ALL SEMICONDUCTOR DEVICE THYRISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR DEVICE THYRISTOR | | TERMINAL TYPE AND QUANTITY | 4 TAB W/SCREW | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 1700.0 MAXIMUM NONREPETITIVE PEAK REVERSE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK REVERSE VOLTAGE AND 1400.0 MAXIMUM REPETITIVE PEAK OFF-STATE VOLTAGE ALL SEMICONDUCTOR DEVICE THYRISTOR |
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