COMPONENT NAME AND QUANTITY | 3 SEMICONDUCTOR DEVICE DIODE AND 3 SEMICONDUCTOR DEVICE THYRISTOR |
CURRENT RATING PER CHARACTERISTIC | 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE 1ST SEMICONDUCTOR DEVICE THYRISTOR |
CURRENT RATING PER CHARACTERISTIC | 60.00 AMPERES MAXIMUM AVERAGE FORWARD CURRENT AVERAGED OVER A FULL 60-HZ CYCLE 2ND SEMICONDUCTOR DEVICE DIODE |
FUNCTION FOR WHICH DESIGNED | SWITCHING |
OVERALL HEIGHT | 21.000 INCHES NOMINAL |
OVERALL LENGTH | 27.000 INCHES NOMINAL |
OVERALL WIDTH | 27.000 INCHES NOMINAL |
MATERIAL | CERAMIC ENCLOSURE |
MOUNTING METHOD | PRESS FIT |
POWER RATING PER CHARACTERISTIC | 41.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 1ST SEMICONDUCTOR DEVICE THYRISTOR |
POWER RATING PER CHARACTERISTIC | 41.5 MILLIWATTS MAXIMUM TOTAL POWER DISSIPATION 2ND SEMICONDUCTOR DEVICE DIODE |
SEMICONDUCTOR MATERIAL | SILICON 1ST SEMICONDUCTOR DEVICE THYRISTOR |
SEMICONDUCTOR MATERIAL | SILICON 2ND SEMICONDUCTOR DEVICE DIODE |
TERMINAL TYPE AND QUANTITY | 6 UNINSULATED WIRE LEAD |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 1ST SEMICONDUCTOR DEVICE THYRISTOR |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 480.0 MAXIMUM NOMINAL REGULATOR VOLTAGE 2ND SEMICONDUCTOR DEVICE DIODE |