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National Stock Number:
5961-01-336-7779
Federal Supply Class:
5961
National Item Identification Number:
013367779
Description:
SEMICONDUCTOR DEVICES,UNITIZED
Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.
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Manufacturer Information:
| A3084174 | 1V156 | HYBRID CIRCUITS INC | | A3084174 | 34707 | SATCON ELECTRONICS INC DBA USE CAGE CODE 33256 FOR CATALOGING | | HC9120 | 34707 | SATCON ELECTRONICS INC DBA USE CAGE CODE 33256 FOR CATALOGING | | A3084174 | 43611 | MICROSEMI CORP - MASSACHUSETTS | | CH5730/883B | 50077 | CERMETEK MICROELECTRONICS, INC. | | A3084174 | 80063 | US ARMY COMMUNICATIONS & ELECTRONICS MATERIEL READINESS COMMAND LOGISTICS ENGINEERING DIR | | ST7026 | 07256 | SILICON TRANSISTOR CORP SUB OF BBF INC | | HCI1206 | 1V156 | HYBRID CIRCUITS INC | | HEX2N3799/883B | 32116 | MARCONI CIRCUIT TECHNOLOGY CORP MICROELECTRONICS DIV | | TS-1242-2 | 54485 | MICROSEMI CORP.- MASSACHUSETTS DBA MICROSEMI LAWRENCE |
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Techincal Specification:
| COMPONENT NAME AND QUANTITY | 6 TRANSISTOR | | CURRENT RATING PER CHARACTERISTIC | 50.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR | | FEATURES PROVIDED | BURN IN AND ELECTROSTATIC SENSITIVE | | OVERALL HEIGHT | 0.400 INCHES MAXIMUM | | OVERALL LENGTH | 0.786 INCHES MAXIMUM | | OVERALL WIDTH | 0.290 INCHES MINIMUM AND 0.320 INCHES MAXIMUM | | MATERIAL | CERAMIC OR PLASTIC ENCLOSURE | | MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 200.0 CELSIUS JUNCTION | | MOUNTING METHOD | TERMINAL | | SPECIAL FEATURES | ALL TRANSISTOR JUNCTION PATTERN ARRANGEMENT: PNP | | POWER RATING PER CHARACTERISTIC | 360.0 MILLIWATTS MAXIMUM TOTAL DEVICE DISSIPATION ALL TRANSISTOR | | SEMICONDUCTOR MATERIAL | SILICON ALL TRANSISTOR | | TERMINAL LENGTH | 0.150 INCHES MINIMUM | | TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT | | VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, BASE OPEN AND 60.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 5.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR |
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