COMPONENT NAME AND QUANTITY | 2 SEMICONDUCTOR DEVICE DIODE |
CURRENT RATING PER CHARACTERISTIC | 35.00 MILLIAMPERES MAXIMUM FORWARD CURRENT, DC ALL SEMICONDUCTOR |
OVERALL HEIGHT | 1.100 MILLIMETERS MAXIMUM |
OVERALL LENGTH | 2.800 MILLIMETERS MAXIMUM |
OVERALL WIDTH | 2.800 MILLIMETERS MAXIMUM |
MATERIAL | PLASTIC ENCLOSURE |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 CELSIUS CASE AND 125.0 CELSIUS CASE |
MOUNTING FACILITY QUANTITY | 4 |
MOUNTING METHOD | TERMINAL |
POWER RATING PER CHARACTERISTIC | 150.0 MILLIWATTS MAXIMUM OFF-STATE POWER DISSIPATION ALL SEMICONDUCTOR |
SEMICONDUCTOR MATERIAL | SILICON ALL SEMICONDUCTOR |
SPECIAL FEATURES | WIDEBANDOPERATION |
TERMINAL LENGTH | 2.900 MILLIMETERS MAXIMUM |
TERMINAL TYPE AND QUANTITY | 4 UNINSULATED WIRE LEAD |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 5.0 MAXIMUM REVERSE VOLTAGE, INSTANTANEOUS AND 0.5 MAXIMUM FORWARD VOLTAGE, DC ALL SEMICONDUCTOR |