| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN AND |
| 65.0 MINIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-EMITTER, WITH BASE SHORT-CIRCUITED TO EMITTER AND |
| 3.5 MINIMUM BREAKDOWN VOLTAGE, EMITTER-TO-BASE, COLLECTOR OPEN |
| CURRENT RATING PER CHARACTERISTIC | 13.50 AMPERES MAXIMUM COLLECTOR CURRENT, DC AND |
| 20.00 MILLIAMPERES MAXIMUM COLLECTOR CUTOFF CURRENT, DC, WITH BASE SHORT-CIRCUITED TO EMITTER |
| POWER RATING PER CHARACTERISTIC | 270.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| INCLOSURE MATERIAL | CERAMIC AND |
| METAL |
| TERMINAL TYPE AND QUANTITY | 2 RIBBON AND |
| 1 PIN |
| OVERALL LENGTH | 0.910 INCHES MAXIMUM |
| MOUNTING METHOD | SLOT |
| TRANSFER RATIO | 15.0 MINIMUM STATIC FORWARD CURRENT TRANSFER RATIO, COMMON-EMITTER |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 250.0 DEG CELSIUS JUNCTION |
| ELECTRODE INTERNALLY-ELECTRICALLY CONNECTED TO CASE | BASE |
| MOUNTING FACILITY QUANTITY | 2 |
| OVERALL HEIGHT | 0.230 INCHES MAXIMUM |
| OVERALL WIDTH | 0.407 INCHES MAXIMUM |