SEMICONDUCTOR MATERIAL | SILICON |
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 20.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND |
| 20.0 MINIMUM GATE TO SOURCE VOLTAGE |
CURRENT RATING PER CHARACTERISTIC | 3.50 AMPERES MAXIMUM DRAIN CURRENT |
POWER RATING PER CHARACTERISTIC | 2.0 WATTS MAXIMUM NONREACTIVE POWER INPUT, INSTANTANEOUS TOTAL, TO ALL TERMINALS |
INCLOSURE MATERIAL | METAL |
TERMINAL TYPE AND QUANTITY | 8 UNINSULATED WIRE LEAD |
MOUNTING METHOD | TERMINAL |
MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND |
| 150.0 DEG CELSIUS CASE |
MOUNTING FACILITY QUANTITY | 8 |
SPECIAL FEATURES | METAL OXIDE FIELD EFFECT TRANSISTOR |