5985-01-525-2761 SWITCH,RADIO FREQUENCY TRANSMISS Index 5925-01-525-2763 CIRCUIT BREAKER

National Stock Number:
5961-01-525-2762

Federal Supply Class:
5961

National Item Identification Number:
015252762

Description:
SEMICONDUCTOR DEVICES,UNITIZED

Detail:
Two or more discrete semiconductor devices such as diode(s) and/or transistor(s), permanently cased, encapsulated, or potted together to form an inseparable unit. Excludes devices having one or more components other than semiconductor devices. The individually distinct devices forming the unit may be internally connected. The unit in itself does not perform a complete specific function and cannot be assigned a more definite item name. It may include or consist of inseparable matched pairs. May or may not include mounting hardware and/or heatsink. For interconnected items arranged in stack(s), see RECTIFIER, SEMICONDUCTOR DEVICE. For items formed on or within a semiconductor material substrate, formed on an insulating substrate or formed on a combination of both of these types, see MICROCIRCUIT (as modified). Excludes NETWORK (as modified); ABSORBER, OVERVOLTAGE; SEMICONDUCTOR DEVICE SET; and SEMICONDUCTOR DEVICE ASSEMBLY. Do not use if more specific name applies.


Manufacturer Information:
JANTX2N5794U81349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M
MIL-PRF-19500/49581349MILITARY SPECIFICATIONS PROMULGATED BY MILITARY DEPARTMENTS/AGENCIES UNDER AUTHORITY OF DEFENSE STANDARDIZATION MANUAL 4120 3-M


Techincal Specification:
COMPONENT NAME AND QUANTITY2 TRANSISTOR
CURRENT RATING PER CHARACTERISTIC600.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC ALL TRANSISTOR
OVERALL HEIGHT0.058 INCHES MINIMUM AND 0.100 INCHES MAXIMUM
OVERALL LENGTH0.240 INCHES MINIMUM AND 0.250 INCHES MAXIMUM
OVERALL WIDTH0.165 INCHES MINIMUM AND 0.175 INCHES MAXIMUM
MATERIALCERAMIC ENCLOSURE
MOUNTING FACILITY QUANTITY6
MOUNTING METHODSLOT
PART NAME ASSIGNED BY CONTROLLING AGENCYSEMICONDUCTOR DEVICE, UNITIZED, DUAL-TRANSISTOR, NPN, SILICON
POWER RATING PER CHARACTERISTIC0.6 WATTS MAXIMUM ON-STATE POWER DISSIPATION ALL TRANSISTOR
SEMICONDUCTOR MATERIALSILICON ALL SEMICONDUCTOR
TERMINAL TYPE AND QUANTITY6 BONDING PAD
VOLTAGE RATING IN VOLTS PER CHARACTERISTIC75.0 MAXIMUM COLLECTOR TO BASE VOLTAGE/STATIC/EMITTER OPEN AND 40.0 MAXIMUM COLLECTOR TO EMITTER VOLTAGE/STATIC/BASE OPEN AND 6.0 MAXIMUM EMITTER TO BASE VOLTAGE, STATIC, COLLECTOR OPEN ALL TRANSISTOR


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