| CURRENT RATING PER CHARACTERISTIC | 150.00 AMPERES MAXIMUM DRAIN CURRENT AND 150.00 AMPERES MAXIMUM SOURCE CURRENT |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | POWER TRANSISTOR MODULE, ISOLATED BASE -- FIELD EFFECT, MOS, N-CHANNEL, SILICON |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | 150.0 CELSIUS JUNCTION |
| MOUNTING FACILITY QUANTITY | 2 |
| MOUNTING METHOD | UNTHREADED HOLE(S) |
| OVERALL HEIGHT | 1.125 INCHES NOMINAL |
| OVERALL LENGTH | 3.620 INCHES NOMINAL |
| OVERALL WIDTH | 1.125 INCHES NOMINAL |
| POWER RATING PER CHARACTERISTIC | 125.0 WATTS MAXIMUM TOTAL DEVICE DISSIPATION |
| SEMICONDUCTOR MATERIAL | SILICON |
| TERMINAL TYPE AND QUANTITY | 3 SCREW |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 60.0 MAXIMUM DRAIN TO SOURCE VOLTAGE AND 60.0 MAXIMUM DRAIN TO GATE VOLTAGE AND 20.0 MAXIMUM GATE TO SOURCE VOLTAGE |