| BODY HEIGHT | 0.160 INCHES MAXIMUM |
| BODY LENGTH | 1.290 INCHES MAXIMUM |
| BODY WIDTH | 0.515 INCHES MINIMUM AND 0.525 INCHES MAXIMUM |
| FEATURES PROVIDED | MONOLITHIC AND HERMETICALLY SEALED AND LOW POWER AND BIPOLAR AND PROGRAMMABLE AND PROGRAMMED AND HIGH SPEED AND W/ENABLE AND POSITIVE OUTPUTS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| INPUT CIRCUIT PATTERN | 11 INPUT |
| OUTPUT LOGIC FORM | P-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -25.0 TO 70.0 CELSIUS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 80249-911265 DRAWING (THIS IS THE BASIC GOVERNING DRAWING, SUCH AS A CONTRACTOR DRAWING, ORIGINAL EQUIPMENT MANUFACTURER DRAWING, ETC.; EXCLUDES ANY SPECIFICATION, STANDARD OR OTHER DOCUMENT THAT MAY BE REFERENCED IN A BASIC GOVERNING DRAWING) |
| TIME RATING PER CHACTERISTIC | 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 1000.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 20.0 VOLTS MAXIMUM POWER SOURCE |