| BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.170 INCHES MAXIMUM |
| BODY LENGTH | 0.740 INCHES MINIMUM AND 0.780 INCHES MAXIMUM |
| BODY WIDTH | 0.250 INCHES MINIMUM AND 0.300 INCHES MAXIMUM |
| FEATURES PROVIDED | 3-STATE OUTPUT AND DC COUPLED AND HIGH SPEED AND HERMETICALLY SEALED AND MONOLITHIC AND NEGATIVE OUTPUTS AND POSITIVE OUTPUTS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| INPUT CIRCUIT PATTERN | 13 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 342.0 MILLIWATTS |
| MEMORY CAPACITY | UNKNOWN |
| MEMORY DEVICE TYPE | RAM |
| OPERATING TEMP RANGE | -10.0 TO 80.0 CELSIUS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |