| MEMORY DEVICE TYPE | PROM |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 16 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 85.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| BODY HEIGHT | 0.140 INCHES MINIMUM AND 0.185 INCHES MAXIMUM |
| BODY LENGTH | 0.840 INCHES MAXIMUM |
| BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-2 MIL-M-38510 |
| FEATURES PROVIDED | MONOLITHIC AND BIPOLAR AND SCHOTTKY |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 10 INPUT |
| OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 794.0 MILLIWATTS |