| BIT QUANTITY | 16384 |
| BODY HEIGHT | 0.040 INCHES MINIMUM AND 0.180 INCHES MAXIMUM |
| BODY LENGTH | 1.170 INCHES MINIMUM AND 1.200 INCHES MAXIMUM |
| BODY WIDTH | 0.550 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| FEATURES PROVIDED | HERMETICALLY SEALED AND HIGH PERFORMANCE AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 11 INPUT |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | +0.0 TO 70.0 CELSIUS |
| WORD QUANTITY | 2048 |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TIME RATING PER CHACTERISTIC | 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 350.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |