| BODY HEIGHT | 0.185 INCHES MAXIMUM |
| BODY LENGTH | 0.960 INCHES MAXIMUM |
| BODY WIDTH | 0.220 INCHES MINIMUM AND 0.310 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-6 MIL-M-38510 |
| FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 12 INPUT |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 715.0 MILLIWATTS |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 18 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 81349-MIL-M-38510 SPECIFICATION (INCLUDES ENGINEERING TYPE BULLETINS, BROCHURES,ETC., THAT REFLECT SPECIFICATION TYPE DATA IN SPECIFICATION FORMAT; EXCLUDES COMMERCIAL CATALOGS, INDUSTRY DIRECTORIES, AND SIMILAR TRADE PUBLICATIONS, REFLECTING GENERAL TYPE DATA ON CERTAIN ENVIRONMENTAL AND PERFORMANCE REQUIREMENTS AND TEST CONDITIONS THAT ARE SHOWN AS "TYPICAL", "AVERAGE", "NOMINAL", ETC.). |
| TIME RATING PER CHACTERISTIC | 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 125.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM POWER SOURCE AND 7.0 VOLTS MAXIMUM POWER SOURCE |