| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| MAXIMUM POWER DISSIPATION RATING | 525.0 MILLIWATTS |
| INPUT CIRCUIT PATTERN | 13 INPUT |
| BODY WIDTH | 0.515 INCHES MINIMUM AND 0.600 INCHES MAXIMUM |
| MEMORY DEVICE TYPE | ROM |
| BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.175 INCHES MAXIMUM |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| STORAGE TEMP RANGE | -65.0/+125.0 DEG CELSIUS |
| BODY LENGTH | 1.235 INCHES MINIMUM AND 1.285 INCHES MAXIMUM |
| TIME RATING PER CHACTERISTIC | 450.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| FEATURES PROVIDED | HERMETICALLY SEALED AND PROGRAMMABLE AND ULTRAVIOLET ERASABLE AND 3-STATE OUTPUT |