| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 635.0 MILLIWATTS |
| MEMORY DEVICE TYPE | ROM |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.3 VOLTS MINIMUM POWER SOURCE AND 6.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 125.0 DEG CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| BODY HEIGHT | 0.210 INCHES NOMINAL |
| BODY LENGTH | 1.290 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| FEATURES PROVIDED | HERMETICALLY SEALED AND ULTRAVIOLET ERASABLE AND MONOLITHIC AND PROGRAMMABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC AND GLASS |
| INPUT CIRCUIT PATTERN | 14 INPUT |
| OPERATING TEMP RANGE | -55.0 TO 100.0 DEG CELSIUS |