| MEMORY CAPACITY | UNKNOWN |
| FEATURES PROVIDED | HIGH PERFORMANCE AND PROGRAMMABLE AND 3-STATE OUTPUT AND W/BUFFERED OUTPUT |
| OPERATING TEMP RANGE | +0.0/+70.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| BODY LENGTH | 1.240 INCHES MINIMUM AND 1.255 INCHES MAXIMUM |
| TERMINAL SURFACE TREATMENT | SOLDER |
| STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| INPUT CIRCUIT PATTERN | 14 INPUT |
| MEMORY DEVICE TYPE | ROM |
| INCLOSURE MATERIAL | PLASTIC |
| BODY HEIGHT | 0.145 INCHES MINIMUM AND 0.155 INCHES MAXIMUM |
| BODY WIDTH | 0.545 INCHES MINIMUM AND 0.555 INCHES MAXIMUM |
| TIME RATING PER CHACTERISTIC | 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 300.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |