| DESIGN FUNCTION AND QUANTITY | 4 GATE, NAND |
| BODY HEIGHT | 0.125 INCHES MINIMUM AND 0.135 INCHES MAXIMUM |
| BODY LENGTH | 0.770 INCHES MAXIMUM |
| BODY WIDTH | 0.245 INCHES MINIMUM AND 0.255 INCHES MAXIMUM |
| FEATURES PROVIDED | LOW POWER AND W/SHORT CIRCUIT PROTECTION AND POSITIVE OUTPUTS |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | PLASTIC |
| INPUT CIRCUIT PATTERN | QUAD 2 INPUT |
| MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
| OPERATING TEMP RANGE | -40.0/+85.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 15.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0/+150.0 DEG CELSIUS |
| TERMINAL TYPE AND QUANTITY | 14 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |