| BODY HEIGHT | 0.150 INCHES MINIMUM AND 0.210 INCHES MAXIMUM |
| BODY LENGTH | 1.290 INCHES MAXIMUM |
| BODY WIDTH | 0.500 INCHES MINIMUM AND 0.610 INCHES MAXIMUM |
| CASE OUTLINE SOURCE AND DESIGNATOR | D-3 MIL-M-38510 |
| FEATURES PROVIDED | BIPOLAR AND PROGRAMMABLE AND SCHOTTKY AND W/ACTIVE PULL-UP AND HIGH IMPEDANCE AND 3-STATE OUTPUT |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| INPUT CIRCUIT PATTERN | 14 INPUT |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM POWER DISSIPATION RATING | 1.1 WATTS |
| MEMORY DEVICE TYPE | ROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | TRANSISTOR-TRANSISTOR LOGIC |
| OVERALL HEIGHT | 0.425 INCHES MAXIMUM |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 7.0 VOLTS MAXIMUM POWER SOURCE |
| STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 90.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |