FEATURES PROVIDED | PROGRAMMABLE AND ERASABLE AND 3-STATE OUTPUT AND MONOLITHIC |
INPUT CIRCUIT PATTERN | 17 INPUT |
PROPRIETARY CHARACTERISTICS | PACS |
MAXIMUM POWER DISSIPATION RATING | 500.0 MILLIWATTS |
MEMORY DEVICE TYPE | ROM |
OUTPUT LOGIC FORM | N-TYPE METAL OXIDE-SEMICONDUCTOR LOGIC |
VOLTAGE RATING AND TYPE PER CHARACTERISTIC | 5.0 VOLTS MAXIMUM POWER SOURCE |
TERMINAL SURFACE TREATMENT | SOLDER |
TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
TIME RATING PER CHACTERISTIC | 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, LOW TO HIGH LEVEL OUTPUT AND 250.00 NANOSECONDS MAXIMUM PROPAGATION DELAY TIME, HIGH TO LOW LEVEL OUTPUT |