| FEATURES PROVIDED | MONOLITHIC AND ELECTROSTATIC SENSITIVE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| MAXIMUM POWER DISSIPATION RATING | 1.5 WATTS |
| MEMORY DEVICE TYPE | PAL |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS EE PROGRAMMABLE ARRAY LOGIC, MONOLITHIC SILICON |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| SPECIAL FEATURES | RECOMMENDED OPERATING SUPPLY VOLTAGE (VCC) 4.5 TO 5.5 VDC; CASE OUTLINE DESCRIPTIVE DESIGNATOR MIL-STD-1835, GDIP3-T24 OR CDIP4-T24 |
| SUPPLEMENTARY FEATURES | 22-INPUT, 10-OUTPUT, EE CMOS, ARCHITECTURALLY GENERIC, PROGRAMMABLE AND-OR ARRAY |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 25.00 NANOSECONDS NOMINAL ACCESS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |