| FEATURES PROVIDED | BIPOLAR AND MONOLITHIC AND PROGRAMMED AND ULTRAVIOLET ERASABLE |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, MEMORY, DIGITAL, CMOS 32K X 8 BIT UVEPROM, MONOLITHIC SILICON |
| PROPRIETARY CHARACTERISTICS | PACS |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY DEVICE TYPE | EPROM |
| OPERATING TEMP RANGE | -55.0 TO 125.0 DEG CELSIUS |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | CASE OUTLINE PER MIL-STD-1835:GDIP4-T28 OR CDIP3-T28; ALTERED ITEM BY PROGRAMMING SMD MICROCIRCUIT 5962-8981702XA USING FILE IDENTIFICATION 92007A1467-5.PRM |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |
| STORAGE TEMP RANGE | -65.0 TO 150.0 DEG CELSIUS |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 45.00 NANOSECONDS NOMINAL ACCESS |