| FEATURES PROVIDED | ELECTROSTATIC SENSITIVE AND MONOLITHIC |
| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| INCLOSURE MATERIAL | CERAMIC |
| PART NAME ASSIGNED BY CONTROLLING AGENCY | MICROCIRCUIT, DIGITAL-MEMORY CMOS, 4K X 9 PARALLEL-TO-SERIAL FIFO |
| MAXIMUM POWER DISSIPATION RATING | 1.0 WATTS |
| MEMORY CAPACITY | 4K X 9 |
| MEMORY DEVICE TYPE | FIRST-IN FIRST-OUT |
| OPERATING TEMP RANGE | -55.0 TO 125.0 CELSIUS |
| SPECIAL FEATURES | MADE TO SMD 5962-9606905XX REQUIREMENTS EXCEPT THAT VOL SHALL BE MEASURED AT 8MA RATHER THAN 16MA |
| STORAGE TEMP RANGE | -65.0 TO 150.0 CELSIUS |
| TERMINAL TYPE AND QUANTITY | 28 PRINTED CIRCUIT |
| TEST DATA DOCUMENT | 96906-MIL-STD-883 STANDARD (INCLUDES INDUSTRY OR ASSOCIATION STANDARDS, INDIVIDUAL MANUFACTUREER STANDARDS, ETC.). |
| TIME RATING PER CHACTERISTIC | 40.00 NANOSECONDS NOMINAL ACCESS |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -0.5 VOLTS MINIMUM INPUT AND 7.0 VOLTS MAXIMUM INPUT |