| INCLOSURE CONFIGURATION | DUAL-IN-LINE |
| MAXIMUM POWER DISSIPATION RATING | 1.2 WATTS |
| MEMORY DEVICE TYPE | PROGRAMMABLE AND ROM |
| OUTPUT LOGIC FORM | COMPLEMENTARY-METAL OXIDE-SEMICONDUCTOR LOGIC |
| SPECIAL FEATURES | ALSO ERASABLE MEMORY DEVICE TYPE |
| VOLTAGE RATING AND TYPE PER CHARACTERISTIC | -2.0 VOLTS NOMINAL INPUT AND 7.0 VOLTS NOMINAL INPUT |
| TERMINAL SURFACE TREATMENT | SOLDER |
| TERMINAL TYPE AND QUANTITY | 24 PRINTED CIRCUIT |
| TIME RATING PER CHACTERISTIC | 20.00 NANOSECONDS AF OUTPUT MEGAWATTS |