| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 50.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND |
| 60.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | 100.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 200.0 MILLIWATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS |
| INCLOSURE MATERIAL | GLASS |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 0.083 MILLIMETERS MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND |
| 150.0 DEG CELSIUS CASE |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 0.047 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 0.110 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | LOW-FREQUENCY LOW POWER SILICON NPNBJT |