| SEMICONDUCTOR MATERIAL | SILICON |
| VOLTAGE RATING IN VOLTS PER CHARACTERISTIC | 100.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR TO EMITTER, SUSTAINED AND |
| 150.0 MAXIMUM BREAKDOWN VOLTAGE, COLLECTOR-TO-BASE, EMITTER OPEN |
| CURRENT RATING PER CHARACTERISTIC | 10.00 MILLIAMPERES MAXIMUM COLLECTOR CURRENT, DC |
| POWER RATING PER CHARACTERISTIC | 30.0 WATTS MAXIMUM TOTAL NONREACTIVE POWER INPUT TO ALL TERMINALS |
| INCLOSURE MATERIAL | GLASS |
| TERMINAL TYPE AND QUANTITY | 3 UNINSULATED WIRE LEAD |
| OVERALL LENGTH | 7.900 MILLIMETERS MAXIMUM |
| MOUNTING METHOD | TERMINAL |
| MAXIMUM OPERATING TEMP PER MEASUREMENT POINT | -55.0 DEG CELSIUS CASE AND |
| 150.0 DEG CELSIUS CASE |
| MOUNTING FACILITY QUANTITY | 3 |
| TERMINAL LENGTH | 4.400 MILLIMETERS MAXIMUM |
| OVERALL WIDTH | 10.200 MILLIMETERS MAXIMUM |
| SPECIAL FEATURES | LOW-FREQUENCY POWER SILICON NPNBJT |